edfas.org 55 ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 25 NO. 3 nanoprobing challenges. Localizing defects within GAA structures or nanoprobing on a single isolated transistor in BPR architecture may no longer be feasible, necessitating innovative approaches to address these gaps. Scanning probe microscopy-based techniques are widely used for defect localization and nanoscale material characterization. 3D mapping of active dopant distributions, particularly in advanced node devices, requires sub-nanometer spatial resolution with extremely high accuracy and sensitivity. Scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) techniques can address some of these gaps but face challenges in several key areas including dopant quantification and availability of suitable calibration samples to support analysis of various substrates including polysilicon, SixGe1-x, III-V semiconductors. Device miniaturization resulting in limited amount of material, presence of multiple interfaces, and confined current paths that increase the measured total resistance beyond the expected spreading resistance, ultimately leading to inaccurate carrier quantification. Increase in SCM sensitivity to support dopant profiling with finer tip geometries requires more sensitive capacitance sensor technology. Site specific sample preparation of 3D device structures, especially where devices are utilized in a vertical integration technology such as 3D NAND is another gap. Sample needs to be carefully prepared in ways that do not introduce changes in the electrical properties of the regions of interest. Scanning electron microscopy (SEM) is heavily used for defect visualization and characterization. For advanced process nodes with ultra-low-k dielectric, aggressively scaled interconnect layers, and metal gate transistors, existing electron beam capabilities in SEM and FIB systems are no longer sufficient to resolve small features. Resolution enhancements are urgently needed to resolve smaller and subtle defects. There is an urgent need to improve practical resolution limits and drive development for future electron and ion beam systems. Aberration correctors in SEM and FIB, advancements in FIB ion sources, immersion vs. non-immersion SEM designs, and improved detector efficiency at low beam currents are potential areas that can be explored. Incorporation of novel detectors such as direct electron detectors supported by open automation framework would greatly help. Better stage performance, automation, and image processing capabilities such as fast and reliable stitching algorithms will be critical in improving efficiency. Circuit edit is expected to face the greatest challenge with the upcoming BPR architecture. The power rails implemented in die backside would block the conventional die backside access and a similar issue is expected for embedded multi-die interconnect bridge devices. Customized solutions for transistor-level wiring access and improvements in sample preparation techniques are needed. Imaging improvements are required for resolving smaller structures resulted from device scaling, deep hole imaging, and IR through-silicon imaging. Process gas delivery and modulation, as well as improvements in conductor and insulator deposition, are necessary. FIB-SEM dual column instrument with advanced features, such as improved gas management, expanded selection of process gases, improved IR Imaging hardware, better stage tracking and accuracy, increased loadlock sample exchange height and enhanced chip CAD interface, would be desirable as a next-generation tool. A detailed technical report created collectively by our council members will be available on the ASM Connect online portal. The report aims to provide an overview of the upcoming challenges and guide technique developments of the next-generation analytical tools that can tackle new technologies. Additionally, the report highlights the importance of continued research and development in the field of die level failure analysis, as the rapid pace of technology advancement necessitates a constant effort to stay ahead of the curve. Whether networking at events or accessing information through EDFA, ISTFA proceedings, or journals, our members have the edge. Now it’s time to introduce EDFAS to others in the industry who would like to take advantage of these careerenhancing benefits. Help us help the industry by expanding our membership and offering others the same exceptional access to information and networking that sets EDFAS apart. To reacquaint yourself with and introduce others to the EDFAS member benefits, visit asminternational.org/web/edfas/membership. EDFAS MEMBERSHIP
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