edfas.org 49 ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 25 NO. 3 LITERATURE REVIEW The current column comprises peer-reviewed articles published since 2022 on beam-based analysis techniques. This includes atomic, electron, neutron, ion, and x-ray beam technologies as well as atom probe tomography (APT). These technologies typically offer the highest resolution, sometimes down to the atomic level; in addition, focused ion beams (FIB) are fundamental to inspection and modifying electronic circuits. Note that inclusion in the list does not vouch for the article’s quality and category sorting is by no means strict. If you wish to share an interesting, recently published peer-reviewed article with the community, please forward the citation to the email address listed above and I will try to include it in future installments. Entries are listed in alphabetical order by first author, then title, journal, year, volume, and first page. Note that in some cases bracketed text is inserted into the title to provide clarity about the article subject. Peer-Reviewed Literature of Interest to Failure Analysis: Beam-based Analysis Techniques Michael R. Bruce, Consultant mike.bruce@earthlink.net • C. Addiego, W. Gao, H. Huyan, et al.: “[Review:] Probing Charge Density in Materials with Atomic Resolution in Real Space [using Electron Microscopy],” Nat. Rev. Phys., 2023, 5, p. 117. • R. Auguste, M.O. Liedke, M. Butterling, et al.: “In situ Measurements of Non-equilibrium Positron State Defects during He Irradiation in Si,” J. App. Physics, 2023, 133, p. 185901. • N.D. Browning, J. Castagna, A.I. Kirkland, et al.: “The Advantages of Sub-sampling and Inpainting for [Atomic Resolution] Scanning Transmission Electron Microscopy,” Appl. Phys. Lett., 2023, 122, p. 050501. • S.R. Cook: “Warp-Free TEM Sample Preparation Methods using FIB/SEM Systems,” Microscopy and Microanalysis, 2022, 28, p. 1961. • O. Dyck, J. Swett, C. Evangeli, et al.: “Contrast Mechanisms in Secondary Electron e-BeamInduced Current (SEEBIC) Imaging,” Microscopy and Microanalysis, 2022, 28, p. 1567. • V. Emtsev, N. Abrosimov, V. Kozlovski, et al.: “Electron- and Proton Irradiation of Strongly Doped Silicon of p-type: Formation and Annealing of Boron-related Defects,” J. Appl. Phys., 2022, 131, p. 125705. • S. Harada, T. Nishigaki, N. Kitagawa, et al.: “Development of High-Resolution Nuclear Emulsion Plates for Synchrotron X-Ray Topography Observation of Large-Size Semiconductor Wafers,” J. Electron. Mater., 2023, 52, p. 2951. • Y. Kohmura, K. Ohwada, N. Kakiuchi, et al.: “X-ray Two-beam Topography for Quantitative Derivation of Phase Shift by Crystalline Dislocations [in SiC],” Phys. Rev. Research, 2023, 5, p. L012043. • G. Kusch, M. Frentrup, N. Hu, et al.: “Defect Characterization of {101̅3} GaN by Electron Microscopy,” J. Appl. Phys., 2022, 131, p. 035705. • V. Léger, P. Desgardin, V. Destefanis, et al.: “Defects Characterization of HgCdTe and CdZnTe Compounds by Positron Annihilation Spectroscopy,” J. Electron. Mater., 2022, 51, p. 4659. • M.C.C. Mihaila, P. Weber, M. Schneller, et al.: “Transverse Electron-Beam Shaping with Light,” Phys. Rev. X, 2022, 12, p. 031043; also see H. Batelaan: “Viewpoint: Shining Light on Electron Microscopy,” Physics, 2022, 15, p. 145. • D. Newbury and V. Casasanta: “A Remembrance of David C. Joy, a True Microscopy and Microanalysis Pioneer,” Microscopy Today, 2022, 30, p. 46. • S. Noçairi, N. Compère, A. Bermond, et al.: “FIBSEM Based 3D Tomography of Micro-electronic Components: Application to Automotive Highdefinition LED Lighting Systems,” Micron. Reliab., 2022, 137, p. 114749. • D.C. Pagan, M.A.J. Rasel, R.E. Lim, et al.: “Nondestructive Depth-resolved Characterization of Residual Strain Fields in High Electron Mobility
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