edfas.org ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 25 NO. 3 44 high penetration depth. These unique advantages have led to the development of different THz applications that can perform subsurface, volumetric, and material characterization, while also providing tracking and tracing capabilities. This video explores the different possibilities of utilizing a THz-TDS system to enhance hardware assurance. THz-TDS can effectively detect defects and voids underneath the polymer material. This is because the THz is sensitive to reflective index change, which is caused by the material difference between the air and polymer. The reflective index difference can also exist within the same polymer material due to the internal stress, aging, deformation, and the degree of crystallinity of the polymer that can be detected by THz-TDS. Also, THz-TDS is very sensitive to moisture that has been used to quantitatively detect water content level. The moisture concentration feature is highly valuable for detecting IC packaging issues and ensuring hardware assurance. THz-TDS is able to simultaneously analyze phase and amplitude information, which is helpful to nondestructively capture the volumetric information of IC packaging. Based on different system setup, these methods can have different resolutions ranging from micrometer to centimeter and applied in various domains. Image enhancement methods will be introduced to optimize these methods for hardware assurance capabilities. THzbased “chipless” RFID technology has been developed to facilitate the tracking and tracing of devices throughout the supply chain. In THz-ID, various materials with distinct dielectric constants are combined to create a unique signal code at THz frequencies. This innovative approach not only enables effective device identification but also contributes to hardware assurance by enhancing security and authentication measures. The presentation can be accessed using the following link: https://bit.ly/42rxDhu. For additional information on the EDFAS Education Subcommittee, contact Sue Sellers at sue.sellers@ asminternational.org. Near-field detection finds bond wires but has slow acquisition time. IN MEMORIAM Paiboon “Pai” Tangyunyong, 65, of Albuquerque, N.M. passed away on May 6 in his home. In 1992, he joined Sandia National Laboratories, where he completed his post-doctoral research in surface science before joining Sandia’s Failure Analysis Department in 1994. Tangyunyong’s impact on the failure analysis (FA) community was represented in his numerous publications, patents, and awards. His diverse, influential FA work included scanning probe microscopy, thermal/IR imaging, and multiple electron, ion, and laser beam-based fault localization techniques. His most recent research interests focused on developing power spectrum analysis for counterfeit device detection and its application for root cause FA. As a Distinguished Member of Technical Staff, Tangyunyong applied/invented diverse capabilities for CMOS and MEMS FA and reliability/ testing. He was recently awarded a National Nuclear Security Administration’s Defense Programs Award of Excellence. Tangyunyong led and influenced many programs at Sandia, inspiring engineers and technologists by his high standards of hard work, dedication and comradery. He was a mentor, leader, and friend to many throughout the FA community. He also held several roles within EDFAS, ISTFA, and was a member of the EDFA Editorial Board. He leaves behind a legacy of technical expertise and professional service at Sandia and the broader FA community.
RkJQdWJsaXNoZXIy MTMyMzg5NA==