edfas.org ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 25 NO. 3 2 PURPOSE: To provide a technical condensation of information of interest to electronic device failure analysis technicians, engineers, and managers. Nicholas Antoniou Editor/PrimeNano nicholas@primenanoinc.com Mary Anne Fleming Director, Journals, Magazines & Digital Media Joanne Miller Senior Editor Victoria Burt Managing Editor Allison Freeman Production Supervisor ASSOCIATE EDITORS Navid Asadi University of Florida Guillaume Bascoul CNES France Felix Beaudoin GlobalFoundries Michael R. Bruce Consultant David L. Burgess Accelerated Analysis Jiann Min Chin Advanced Micro Devices Singapore Edward I. Cole, Jr. Sandia National Labs Michael DiBattista Varioscale Inc. Rosine Coq Germanicus Universitié de Caen Normandie Szu Huat Goh Qualcomm Ted Kolasa Northrop Grumman Space Systems Rosalinda M. Ring Thermo Fisher Scientific Tom Schamp Materials Analytical Services LLC David Su Yi-Xiang Investment Co. Martin Versen University of Applied Sciences Rosenheim, Germany FOUNDING EDITORS Edward I. Cole, Jr. Sandia National Labs Lawrence C. Wagner LWSN Consulting Inc. GRAPHIC DESIGN Jan Nejedlik, jan@designbyj.com PRESS RELEASE SUBMISSIONS magazines@asminternational.org Electronic Device Failure Analysis™ (ISSN 1537-0755) is published quarterly by ASM International®, 9639 Kinsman Road, Materials Park, OH 44073; tel: 800.336.5152; website: edfas. org. Copyright © 2023 by ASM International. Receive Electronic Device Failure Analysis as part of your EDFAS membership. Non-member subscription rate is $175 U.S. per year. Authorization to photocopy items for internal or personal use, or the internal or personal use of specific clients, is granted by ASM International for libraries and other users registered with the Copyright Clearance Center (CCC) Transactional Reporting Service, provided that the base fee of $19 per article is paid directly to CCC, 222 Rosewood Drive, Danvers, MA 01923, USA. Electronic Device Failure Analysis is indexed or abstracted by Compendex, EBSCO, Gale, and ProQuest. The implementation of wide-bandgap-based power semiconductor solutions, in particular those based on SiC and GaN, has grown substantially over the last few years. Driving forces behind this market development include global megatrends like energy saving, decarbonization, and effective use of scarce resources. SiC power components offer distinct advantages. The new wide-bandgap technology is more than an evolutionary step forward, as we have seen in previous years with each new generation of silicon power devices; this technology has the capability to be a real game changer. SiC-based systems can be characterized by a steep change in performance, which can make them attractive for designers targeting innovative and disruptive solutions. To understand the differences between Si and wide-bandgap materials like SiC or GaN solutions, a closer look into the physical parameters of these new semiconductor materials, mainly the larger band gap and its implications, is required (see Fig. 1). Due to the much higher critical breakdown field of the material, the voltage range for fast and unipolar Schottky diodes as well as field effect based SiC switches (MOSFET, junction field effect transistor (JFET)) can be therefore extended to values well above 1000 V. Insulated gate bipolar transistors (IGBTs) or super-junction MOSFETs in combination with SiC diodes have already become the norm in various applications, such as solar, chargers, or power supplies. This combination, a fast silicon-based switch matched with a SiC diode, is often termed a hybrid solution. SiC transistors are on the way to becoming an alternative to today’s established IGBT technologies in industrial and automotive power electronics. A powerful SiC switch offering a proven and established ruggedness and AUGUST 2023 | VOLUME 25 | ISSUE 3 A RESOURCE FOR TECHNICAL INFORMATION AND INDUSTRY DEVELOPMENTS ELECTRONIC DEVICE FAILURE ANALYSIS GUEST EDITORIAL SiC POWER DEVICES AND RELATED ROBUSTNESS AND RELIABILITY ASPECTS Peter Friedrichs, Infineon Technologies AG peter.friedrichs@infineon.com edfas.org Friedrichs (continued on page 50) Fig. 1 Important physical parameters of modern power semiconductor materials.
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