edfas.org ELECTRONIC DEV ICE FA I LURE ANALYSIS | VOLUME 25 NO . 1 50 • B. Setera and A. Christou: “Review Paper: Threading Dislocations in GaN High-Voltage switches,” Microelectron. Reliab., 2021, 124, p. 114336. • J. Silomon, J. Gluch, E. Zschech, et al.: “Crack Identification and Evaluation in BEoL Stacks of Two Different Samples utilizing Acoustic Emission Testing and Nano X-ray Computed Tomography,” Microelectron. Reliab. 2021, 121, p. 114137. • M. Sobolewski, J. Wojewoda-Budka, Z. Huber, et al.: “Solder Joints Reliability of Through Hole Assemblies with Various Land and Hole Design,” Microelectron. Reliab., 2021, 125, p. 114368. • L. Su, et al.: “Defect Inspection of Flip Chip Solder Joints based on Non-destructive Methods: A Review,” Microelectron. Reliab., 2020, 110, p. 113657. • K.H. Teo, Y. Zhang, N. Chowdhury, et al: “Emerging GaN Technologies for Power, RF, Digital, and Quantum Computing Applications: Recent Advances and Prospects,” J. Appl. Phys., 2021, 130, p. 160902. • S.L. Ting, P.K. Tan, H.H.W. Thoungh, et al.: “Failure Analysis on Capacitor Failures using Simple Circuit Edit Passive Voltage Contrast Method,” Microelectron. Reliab., 2022, 135, p. 114566. • F. Wang, Z. Yue, J. Liu, et al.: “Quantitative Imaging of Printed Circuit Board (PCB) Delamination Defects using Laser-induced Ultrasound Scanning Imaging,” J. Appl. Phys., 2022, 131, p. 053101. • W. Wang, X. Lu, Z. He, et al.: “Using Convolutional Neural Network for Intelligent SAM Inspection of Flip Chips,” Meas. Sci. Technol., 2021, 32, p. 115022. • Z. Wang, J. Gao, W. Wang, et al.: “The Impact of Gold Plating Process for Bonding Pads on Interconnection Quality,” IEEE Trans. Device Mater. Rel., 2022, 22, p. 65. • P.J. Wellmann: “TOPICAL REVIEW: Review of SiC Crystal Growth Technology,” Semicond. Sci. Technol., 2018, 33, p. 103001. • Y. Yang, M.K. Toure, P.M. Souare, et al.: “Modeling of Flip-chip Underfill Delamination and Cracking with Five Input Manufacturing Variables,” Microelectron. Reliab., 2022, 132, p. 114533. • M. Zhang, F. Qin, S. Chen, et al.: “Protrusion of Through-Silicon-Via (TSV) Copper with Double Annealing Processes,” J. Electron. Mater., 2022, 51, p. 2433. • T. Zhang, J. Dong, L. Yang, et al.: “Automatic Defect Inspection of Thin Film Transistor-liquid Crystal Display Panels using Robust One-dimensional Fourier Reconstruction with Non-uniform Illumination Correction,” Review of Scientific Instruments, 2021, 92, p. 103701. • Y. Zhang and D.J. Smith: “REVIEWS: Comprehensive, In Operando, and Correlative Investigation of Defects and their Impact on Device Performance,” J. Semicond., 2022, 43, p. 041102. • K. Zhao, Y. An, X. Sun, et al.: “Characterization of Corner/edge Effects of Through Silicon via [TSV] Arrays and Layout Optimization in 3D Integrated Circuits,” Jpn. J. Appl. Phys., 2021, 60, p. SBBC05. • T. Zhu, Q. Zhang, H. Bai, et al.: “Investigations on Deformation and Fracture Behaviors of the Multialloyed SnAgCu Solder and Solder Joint by in-situ Observation,” Microelectron. Reliab., 2022, 135, p. 114574. NOTEWORTHY NEWS ESREF 2023 The34thEuropeanSymposiumonReliabilityof ElectronDevices, FailurePhysics andAnalysis (ESREF 2023) will take place October 2-5 in Toulouse, France. This international symposiumhas a focus on reliability in all aspects of electronics including new applications in extremely harsh environments such as space, transport, energy conversion, and smart functions. It provides the leading European forum for developing all aspects of reliability management and innovative analysis techniques for present and emerging semiconductor applications. For more information, visit esref2023.sciencesconf.org.
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