edfas.org 49 ELECTRONIC DEV ICE FA I LURE ANALYSIS | VOLUME 25 NO . 1 LITERATURE REVIEW The current column comprises a cornucopia of peer-reviewed articles published since 2018 on case studies, system/ board level, packaging, 3D/TSVs, discretes, avionics/automotive, power, andwide band electronics. Note that inclusion in the list does not vouch for the article’s quality and category sorting is by no means strict. If you wish to share an interesting, recently published peer-reviewed article with the community, please forward the citation to the e-mail address listed above and I will try to include it in future installments. Entries are listed in alphabetical order by first author, then title, journal, year, volume, and first page. Note that in some cases bracketed text is inserted into the title to provide clarity about the article subject. Peer-Reviewed Literature of Interest to Failure Analysis: Cornucopia Michael R. Bruce, Consultant mike.bruce@earthlink.net • D.K. Maity, S.K. Roy, and C. Giri: “A Cost-effective Repair Scheme for Clustered TSV Defects in 3D ICs,” Microelectron. Reliab., 2022, 129, p. 114460. • C. Martinella, P. Natzke, R.G. Alia, et al.: “Heavy-ion Induced Single Event Effects and Latent Damages in SiC Power MOSFETs,” Microelectron. Reliab., 2022, 128, p. 114423. • D. May, J. Heilmann, E. Boschman, et al.: “Tilt and Warpage Measurement as Inline Quality Assessment Tool,” Microelectron. Reliab., 2022, 135, p. 114601. • M. Meneghini, C.D. Santi, I. Abid, et al.: “[Tutorial:] GaN-based Power Devices: Physics, Reliability, and Perspectives,” J. Appl. Phys., 2021, 130, p. 181101. • G. Naresh-Kumar, P.R. Edwards, T. Batten, et al.: “Non-destructive Imaging of Residual Strains in GaN and their Effect on Optical and Electrical Properties using Correlative Light–electron Microscopy,” J. Appl. Phys., 2022, 131, p. 075303. • D.K. Ngwashi and L.V. Phung: “Review Paper: Recent Review on Failures in Silicon Carbide Power MOSFETs,” Microelectron. Reliab., 2021, 123, p. 114169. • J.R. Nicholls: “Electron Trapping effects in SiC Schottky Diodes: Review and Comment,” Microelectron. Reliab., 2021, 127, p. 114386, • J. Nishio, C. Ota and R. Iijima: “Structural Study of Single Shockley Stacking Faults Terminated near Substrate/epilayer Interface in 4H-SiC,” Jpn. J. Appl. Phys., 2022, 61, p. SC1005. • B. Öner, J.W. Pomeroy, and M. Kuball: “Time Resolved Hyperspectral Quantum Rod Thermography of Microelectronic Devices: Temperature Transients in a GaN HEMT,” IEEE Electron. Device Letters, 2020, 41, p. 812. • S. Pang, M. Chen, S. Ta, et al.: “Void and Solder Joint Detection for Chip Resistors based on X-ray Images and Deep Neural Networks,” Microelectron. Reliab., 2022, 135, p. 114587. • S.P. Phansalkar, C. Kim, and B. Han: “Effect of Critical Properties of Epoxy Molding Compound on Warpage Prediction: A Critical Review,” Microelectron. Reliab., 2022, 130, p. 114480. • K. Piotrowska, F. Li, and R. Ambat: “Transformation of Reflow Solder Flux Residue under Humid Conditions,” Microelectron. Reliab., 2021, 23, p. 114195. • C.H. Rao, K. Avinash, B.K.S.V.L. Varaprasad, et al.: “A Review on Printed Electronics with Digital 3D Printing: Fabrication Techniques, Materials, Challenges and Future, Opportunities,” J. Electron. Mater., 2022, 51, p. 2747. • Y. Rao, Y. Chen, Z. He, et al: “Degradation Mechanism Analysis for SiC Power MOSFETs under Repetitive Power Cycling Stress,” J. Phys. D: Appl. Phys., 2022, 55, p. 095113. • M.A. Reshchikov, D.O. Demchenko, D. Ye, et al.: “The Effect of Annealing on Photoluminescence from Defects in Ammonothermal GaN,” J. Appl. Phys., 2022, 131, p. 035704.
RkJQdWJsaXNoZXIy MTMyMzg5NA==