February_EDFA_Digital

edfas.org 45 ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 23 NO. 1 LITERATURE REVIEW T his column covers peer-reviewedarticles published since 2017 onbeam-basedanalysis techniques: including atomic, electron, neutron, ion, and x-ray beam technologies as well as atom probe tomography (APT). These technologies typically offer the highest resolution, sometimes down to the atomic level. In addition, focused ion beams (FIB) are fundamental to inspection and modifying electronic circuits. More entries were provided in the November 2020 issue of EDFA. Note that inclusion in this list does not vouch for the article’s quality and category sorting is by no means strict. If you wish to share an interesting, recently published peer-reviewed article with the community, please forward the citation to the above email address and I will try to include it in future installments. Entries are listed in alphabetical order by first author, then title, journal, year, volume, and first page. Note that in some cases bracketed text is inserted into the title to provide clarity about the article topic. Peer-Reviewed Literature of Interest to Failure Analysis: Beam-Based Analysis Techniques: Part II Michael R. Bruce, Consultant mike.bruce@earthlink.net • W.A. Hubbard, Z. Lingley, J. Theiss, et al.: “Scanning Transmission Electron Microscope Mapping of Electronic Transport in Polycrystalline BaTiO 3 Ceramic Capacitors [Using EBIC],” Appl. Phys. Lett., 2019, 115, p. 133502. • W.A. Hubbard, M. Mecklenburg, H.L. Chan, et al.: “STEM Imaging with Beam-Induced Hole and Secondary Electron Currents,” Phys. Rev. Applied, 2018, 10, p. 044066. • Y. Kondo, Y. Aoyama, H. Hashiguchi, et al.: “Strain Measurement of a Channel Between Si/Ge Stressors in a Tri-Gate Field Effect Transistor Utilizing Moiré Fringes in Scanning Transmission Microscope Images,” Appl. Phys. Lett., 2019, 114, p. 172103. • K. Kutukova, S. Niese, E. Zschech, et al.: “A Laboratory X-Ray Microscopy Study of Cracks in On-Chip Interconnect Stacks of Integrated Circuits,” Appl. Phys. Lett., 2018, 113, p. 091901. • S. Lee, L.H. Li, L.H. Khoo, et al.: “Prevention of Copper Corrosion on Post-FIB Wet Stained Sample Using UV Charge-Neutralization Method,” Microelectron. Reliab., 2020, 109, p. 113636. • B.E. Liu, Z.L. Dong, Y. Hua, et al.: “Electron-Beam Radiation Induced Degradation of Silicon Nitride and its Impact to Semiconductor Failure Analysis by TEM,” AIP Advances, 2018, 8, p. 115327. • A. London, “Quantifying Uncertainty fromMass- Peak Overlaps in Atom Probe Microscopy,” Microsc. and Microanal., 2019, 25 (2), p. 378. • C. Lopez, A. Trimeche, D. Comparat, et al.: “[Proof- of-Concept:] Real-Time Trajectory Control of Deterministically Produced Ions,” Phys. Rev. Applied, 2019, 11, p. 064049; also see P. Weiss, “How to Guide Each Ion in a Beam,” Physics, 2019, 12, p. 70. • I. Madan, G.M. Vanacore, S. Gargiulo, et al.: “The Quantum Future of Microscopy: Wave Function Engineering of Electrons, Ions, and Nuclei [For Low Dose Imaging],” Appl. Phys. Lett., 2020, 116, p. 230502. • R. Makarem, F. Cristiano, D. Muller, et al.: “An Improved STEM/EDX Quantitative Method for Dopant Profiling at the Nanoscale,” Microsc. and Microanal., 2020, 26 (1), p. 76. • T. Matsubara, K Sugimoto, S Goubara, et al.: “Direct Observation of Inclined a-Type Threading Dislocation with a-Type Screw Dislocation in GaN [Using HAADF-STEM],” J. Appl. Phys., 2017, 121, p. 185101. • I. McCarroll, B. Scherrer, P. Felfer, et al.: “Interpreting Atom Probe Data from Oxide–Metal Interfaces,” Microsc. and Microanal., 2018, 24 (4), p. 342. • M. Mecklenburg, W.A. Hubbard, J.J. Lodico, et al.: “Electron Beam-Induced Current [TEM] Imaging with Two-Angstrom Resolution,” Ultramicroscopy, 2019, 207, p. 112852. • J.E. Moore, CA. Affouda, SI. Maximenko, et al.: “Analytical and Numerical Simulation of Electron Beam Induced Current Profiles in p-n Junctions,” J. Appl. Phys., 2018, 124, p. 113102.