February_EDFA_Digital

edfas.org ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 23 NO. 1 10 ABOUT THE AUTHORS (cont'd) Kees Beenakker got his Ph. D. in 1974 at the FOM-Institute for Atomic and Molecular Physics in Amsterdam. His professional career started at Philips Research Laboratories in Eindhoven. In 1982 he took the position of head of the worldwide assembly process and equipment development of the Philips Semiconductor Division. In 1989 hewas appointed chair professor in electrical engineering at Delft University of Technology. From 1999 till 2009 he was chairman of the department of microelec- tronics and computer engineering and fromMarch 2007 till May 2012 he was scientific director of the Delft institute of microsystems and nanoelectronics. FromMay 2012 till his retirement in 2014 hewas director of the TU Delft-Beijing Research Centre in Beijing. In 2014 he cofounded Jiaco Instruments. SPOTLIGHT ON TUTORIALS The EDFAS Education Subcommittee strives for the development and delivery of educational products to the EDFAS membership. Keeping with its strategic focus on reaching a broader audience, including facilitating Q&A and educational exchanges on the ASMConnect platform, the subcommittee has recently started inviting ISTFA tuto- rial speakers to present short format presentations on selected FA topics. These presentations are nowavailable on ASM Connect. Use the following link: bit.ly/3pNQdxn and click on the Educational Tutorials folder. For this issue, we are highlighting the tutorial pre- sented by Greg Johnson on defect localization. Greg Johnson is a senior applications development engineer at Zeiss Microscopy. Johnson earned 19 U.S. patents with IBM’s PackagingDevelopment Lab. Thenworking for IBM’s Semiconductor ResearchandDevelopment Center, hewas the lead front end of line, defect localization engineer for eight bulk technology node qualifications, and one silicon on insulator. At Zeiss he is working on nanoprobing and electron microscopy. EDUCATION NEWS The tutorial describes seven defect localization techniques. A slide from Greg Johnson’s tutorial available on ASM Connect. Johnson’s tutorial introduces defect localization in semiconductors. First, he describes a case study where localization was critical to finding a leakage path. Then he provides an overviewof seven localization techniques: electron beam absorbed current, electron beam induced current, passive voltage contrast, electron beam induced resistance change, lock-in thermography, photonemission microscopy, and conductive atomic forcemicroscopy. Due to the shortened length of the video, only the first three were explored in detail. The video presents an introduc- tion to the physics (usingmore cartoons than equations!), followed by several examples demonstrating the benefits of each technique. It is hoped the viewer comes awaywith anappreciationof howthese techniquesmaybeutilized to solve a variety of real-world semiconductor failure analysis problems. Johnson’s presentation can be accessed using the following link, bit.ly/38Ykx1r. For additional information on the EDFAS Education Subcommittee, contact Bhanu Sood at bhanu.sood@ nasa.gov.