November_EDFA_Digital

edfas.org ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 22 NO. 4 52 Accelerated Analysis............................................. 52 Allied High Tech. ..............................................26-27 Checkpoint Technologies................................18-19 Gatan....................................................................... 3 Hamamatsu................................. Inside Back Cover ISTFA...................................................................... 35 Semicaps..........................................................40-41 TESCAN USA Inc...........................Inside front cover Quartz Imaging. .................................................... 15 Quantum Focus................................................ 9 / 37 ULTRA TEC...............................................Back cover For advertising information and rates , contact: Kelly Johanns, Business Development Manager 440.318.4702, kelly.johanns@asminternational.org Current rate card may be viewed online at asminternational.org/mediakit. INDEX OF ADVERTISERS A RESOURCE FOR TECHNICAL INFORMATION AND INDUSTRY DEVELOPMENTS ELECTRONIC DEVICE FAILURE ANALYSIS Advertise in Electronic Device Failure Analysis magazine! For information about advertising in Electronic Device Failure Analysis: Kelly Johanns, Business Development Manager 440.318.4702, kelly.johanns@asminternational.org Current rate card may be viewed online at asminternational.org/mediakit. ABOUT THE COVER a. Color ribbon contrails resulting from the thick inner layer oxide breakdown of a high voltage isolation device. Photo by Kristopher Staller, Texas Instruments, Second Place Winner, Color Images. b. Fiber optic fracture surface showing cantilever curve, mirror face, and Wallner/Hackle lines. Photo by Nancy Biro, Raytheon, Second Place Winner, Black & White Images. c. Optical microscope view (Nomarski contrast) of a glass window anti-reflective coating surface contamination “smiley” defect. Photo by Gérald Guibaud, THALES, Third Place Winner, Color Images. d. FIB cross section reveals gate oxide breakdown caused by electrical overstress. The shape of damage at poly gate looks like a centipede. Photo by Ying You Syu, NXP Semiconductors, Third Place Winner, Black & White Images. All images from the 2019 EDFAS Photo Contest.