November_EDFA_Digital

edfas.org ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 22 NO. 4 44 LITERATURE REVIEW T his column covers peer-reviewedarticles published since 2017 onbeam-basedanalysis techniques: including atomic, electron, neutron, ion, and x-ray beam technologies as well as atom probe tomography (APT). These technologies typically offer the highest resolution, sometimes down to the atomic level. In addition, focused ion beams (FIB) are fundamental to inspection andmodifying electronic circuits. Note that inclusion in this list does not vouch for the article’s quality and category sorting is by no means strict. If you wish to share an interesting, recently published peer-reviewed article with the community, please forward the citation to the above email address and I will try to include it in future installments. Entries are listed in alphabetical order by first author, then title, journal, year, volume, and first page. Note that in some cases bracketed text is inserted into the title to provide clarity about the article topic. Peer-Reviewed Literature of Interest to Failure Analysis: Beam-Based Analysis Techniques Michael R. Bruce, Consultant mike.bruce@earthlink.net • M. Arita, A. Tsurumaki-Fukuchi, and Y Takahashi: “Progress Review: Filamentary Switching of ReRAM Investigated by In-Situ TEM,” Jpn. J. Appl. Phys., 2020, 59, p. SG0803. • M. Bergin, S.M. Lambrick, H. Sleath, et al.: “Observation of Diffraction Contrast in Scanning HeliumMicroscopy,” Sci Rep, 2020, 10, p. 2053. • H. Brown and J. Ciston: “Atomic Resolution Imaging of Light Elements in a Crystalline Environment using Dynamic Hollow-Cone Illumination Transmission Electron Microscopy,” Microsc. and Microanal., 2020, 26 (4), p. 623. • L. Chen, X. Ma, J. Zhu, et al.: “Direct Observation of Gate Leakage Paths in AlGaN/GaN High Electron Mobility Transistors by Electron Beam–Induced Current,” IEEE Trans. Device and Mater. Rel., 2018, 18, p. 359. • A. Devaraj, D.E. Perea, J. Liu, et al.: “[Review:] Three-Dimensional Nanoscale Characterisation of Materials by Atom Probe Tomography,” Int. Mat. Rev., 2018, 63, p. 68. • Y. Goh, J. Schwartz, E. Rennich, et al.: “Contamination of TEM Holders Quantified and Mitigated With the Open-Hardware, High-Vacuum Bakeout System,” Microsc. and Microanal., 2020, 26 (5), p. 1. • M.A. Gribelyuk, J. Mody, E. Kaganer, et al.: “Sample Preparation by Focused Ion BeamWithout Argon Ion Milling for Quantitative Electron Holography of p-n Junctions,” J. Appl. Phys., 2019, 126, p. 065702. • M. Harada, Y. Minekawa, and K. Nakamae: “Defect detection techniques robust to process variation in semiconductor inspection [using SEM],” Meas. Sci. Technol., 2019, 30, p. 035402. • T.R. Harvey, F.S. Yasin, J.J. Chess, et al.: “Interpretable and Efficient Interferometric Contrast in Scanning Transmission Electron Microscopy [Holography] with a Diffraction- Grating Beam Splitter,” Phys. Rev. Applied, 2018, 10, p. 061001; also see “ STEM Microscope Generates Two Electron Beams to Make Holographs of Atomic Structure,” February 17, 2019, ASM International, asminternational.org/web/edfas/news/-/ journal_content/56/10180/36546918/NEWS. • M. Holler, M. Odstrcil, M. Guizar-Sicairos, et al.: “Three-Dimensional Imaging of [16nm FinFET] Integrated Circuits with Macro-to Nanoscale Zoom [Using Nanoscale Resolution Ptychographic X-ray Laminography],” Nat. Electron., 2019, 2, p. 464. • V. Holý, D. Kriegner, A. Lesnik, et al.: “Observation of Individual Stacking Faults in GaN Microcrystals by X-Ray Nanodiffraction,” Appl. Phys. Lett., 2017, 110, p. 121905. • R. Hu, J. Xue, X. Wu, et al.: “Atom Probe Tomography Characterization of Dopant Distributions in Si FinFET: Challenges and Solutions,” Microsc. and Microanal., 2020, 26 (1), p. 36.