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edfas.org 33 ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 22 NO. 4 11. F. Omnès, P. Muret, P. Volpe, M. Wade, J. Pernot, and F. Jomard: “Study of Boron Doping in MPCVD Grown Homoepitaxial Diamond Layers Based on Cathodoluminescence Spectroscopy, Secondary Ion Mass Spectroscopy, and Capacitance – Voltage Measurements,” Diam. Relat. Mater., 2011, 20 (7), p. 912–916. 12. M. Tajima: “Determination of Boron and Phosphorus Concentration in Silicon by Photoluminescence Analysis,” Appl. Phys. Lett., 1978, 32 (719), p. 11–14. 13. B.D. White and B. Anderson (advisor): “Cathodoluminescence SpectroscopyStudiesofAluminumGalliumNitrideandSiliconDevice Structures as a Functionof Irradiation andProcessing,” [unpublished Ph.D. dissertation], The Ohio State University, 2006. 14. J. Chen, W. Yi, T. Kimura, S. Takashima, M. Edo, and T. Sekiguchi: “Cathodoluminescene Study of Mg Implanted GaN: The Impact of DislocationonMgDiffusion,” Appl.Phys.Express, 2019, 12 (5),p.51010. 15. R. Sugie, T. Uchida, K. Matsumara, and H. Sako: “Using Cross- Sectional Cathodoluminescence to Visualize Process-Induced Defects inGaN-BasedHigh ElectronMobility Transistors,” J. Electron. Mater., 2020. 16. C. Link, F.A. Marino, S. Member, N. Faralli, and T. Palacios: “Effects of Threading Dislocations on AlGaN / GaN High-Electron Mobility Transistors,” IEEE Trans. Electron Devices, 2013, 57 (1), p. 353–360. 17. N. Sharma et al.: “Chemical Mapping and Formation of V-defects in InGaN Multiple QuantumWells,” Appl. Phys. Lett., 2000, 77, p. 1274. 18. C. Chang, H. Li, Y. Shih, and T. Lu: “Manipulation of Nanoscale V-pits toOptimize Internal QuantumEfficiency of InGaNMultipleQuantum Wells,” Appl. Phys. Lett., 2015, 106 (091104), p. 1–4. 19. S. Chen, C. Chang, and T. Lu: “Effect of Strains and V-Shaped Pit Structures on the Performance of GaN-Based Light-EmittingDiodes,” Crystals , 2020, 10 (311), p. 1–10. 20. D. Kang, J. Oh, J. Song, T. Seong, M. Kneissl, and H. Amano: “Hole Injection Mechanism in the Quantum Wells of Blue Light Emitting Diode with V Pits for Micro-Display Application,” Appl. Phys. Express, 2019, 102016, p. 1–4. 21. C. De Santi et al.: “Nanoscale Investigation of Degradation and Wavelength Fluctuations in InGaN-Based Green Laser Diodes,” IEEE Trans. Nanotechnol., 2016, 15 (2), p. 274–280. 22. E.A. Douglas, D. Zeenberg, M. Maeda, B.P. Gila, and C.R. Abernathy: “Depth-Resolved Cathodoluminescence Spectroscopy Characterization of RF Stressed AlGaN / GaN High Electron Mobility Transistors,” ECS Solid State Lett., 2013, 2 (6), p. 39–42. 23. C. Lin, et al.: “Nanoscale Mapping of Temperature and Defect Evolution Inside Operating AlGaN / GaN High Electron Mobility Transistors,” Appl. Phys. Lett., 2009, 95 (033510), p. 25–27. ABOUT THE AUTHORS Christian Monachon earned his B.S., M.S. and Ph.D. in materials science and technology from the Swiss Federal Institute of Technology in Lausanne, Switzerland. He then went on to complete a postdoc in themechanical engineering department at theUniversity of California, Berkeley. He joined Attolight in 2016 and has since contributed to the company’s development of cathodoluminescence spectroscopy solutions for both industrial and academic applications. He is the product manager for the Attolight Alallinanalytical and failure analysis tool, andheads applicationdevelopment of this tool. MatthewJ. Davies earnedhisM.Phys (honors) andPh.D. inphotonphysics at theUniversityofManchester, UnitedKingdom,wherehe subsequently completed a post-doc. He spent four years in the GaN analytics & metrology group at Osram OS AG. He joined Attolight in the summer of 2019 and oversees product management and applications development of Attolight’s Säntis 300 full wafer tool. 2021 IRPS CONFERENCE The IEEE International Reliability Physics Symposium’s (IRPS) annual conference will be held March 21-25, 2021, at the Hyatt Regency Monterey, Calif. The IRPS technical program includes technical sessions, keynotes and invited talks on emerging issues, tutorials, workshops, poster sessions, a year-in-review seminar, and equipment demonstrations. Special attention is given to the reliability of advanced CMOS scaling, new materials introduction, new processes or integration strategies, and/or fundamentally new device architectures. Attendees returning from IRPS will be better equipped to solve critical reliability problems and develop effective qualification procedures that affect their company’s bottom line. The IRPS Conference is sponsored by the IEEE Reliability Society and IEEE Electron Devices Society. For more informa- tion, visit the IRPS website at irps.org and watch for any updates to the meeting plan. NOTEWORTHY NEWS