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edfas.org ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 22 NO. 4 32 (circled in green and orange) where the wafer under- and over performs with respect to the model. Wafer level residual analyses like this canbe performed for any nano/microscale properties measurable by CL and used to identify hotspots on wafers, as well as regions of highest variance. FAILURE ANALYSIS Optoelectronic devices. The aging of a device typically impacts cath- odoluminescence by creating non- radiative recombination centers. This can be used to detect degrada- tion mechanisms in laser diodes, [21] as shown in Fig. 6 and is consistent with electrical probing. Here, given the emission wavelength of the laser (green), damage is highlighted by a drop in near band edge and multi- quantum well luminescence. GaN-based high electronmobility transistor structures. Several studies of the easy identification of a killer defect in a HEMT structure via CL have recently emerged. In one case, [3] a punch-through defect was identified creating a short-circuit through the insulation C-compensated GaN layer of the stack. In another case, [22] monitoring GaN’s “yellowdefect band” helped identify the spot at which an RF device had failed, an effect that was observed in situ by another group. [23] CONCLUSION A brief historical overview of cathodoluminescence, the low energy light emitted upon a material’s excitation by an electron beam, leading to its emergence as a tech- nique useful in semiconductor fabs and failure analysis laboratories has beenpresented. The advent of compound semiconductors, device miniaturization, and new cath- odoluminescence collection implementation have made this emergence possible. In a second part, examples were given of the benefits brought by cathodoluminescence spectroscopy for three distinct parts of a semiconductor device’s lifetime: its development, its production, and failure analysis. The twomajor technologieswhere this benefit ismost evident are optoelectronics andhigh electronmobility transistors, which are made increasingly important by the advent of technologies as diverse as 5G technologies,micro-LEDdis- plays, electric and self-driving cars, and specialty lighting. ACKNOWLEDGMENTS Marc Fouchier, Nikita Rudov, and Izak Kapilevich are gratefully acknowledged for providing some of the images shown in this paper. REFERENCES 1. D. Stowe and M. Bertilson: “Advances in (and a Brief History of) Cathodoluminescence Microscopy,” Microsc. Microanal., 2017, 23 (November), p. 1034–1035. 2. J. Moseley, et al . : “Luminescence Methodology to Determine Grain- Boundary , Grain-Interior, and Surface Recombination in Thin-Film Solar Cells,” J. Appl. Phys., 2018, 124 (113104), p. 1–13. 3. C. Monachon, et al.: “Cathodoluminescence Spectroscopy for Failure Analysis and Process Development of GaN-based Microelectronic Devices,” IEEE International Reliability Physics Symposium Proceedings, March 2018. 4. C. Monachon, S. Muckenhirn, H. Majidi, and C. France: “Quantitative Cathodoluminescence Streamlines Chip Production,” Compd. Semicond. , June 2019, p. 18–22. 5. F. Massabuau et al.: “Optical andStructural Properties of Dislocations in InGaNOptical and Structural Properties of Dislocations in InGaN,” J. Appl. Phys., 2019. 125 (165701), p. 1–10. 6. M. Fouchier et al.: “Characterization of Plasma Induced Damage and Strain on InP Patterns and Their Impact on Luminescence,” MRS Adv., 2018, 448, p. 5–7. 7. Q. Yan, P. Rinke, A. Janotti, M. Scheffler, andC.G. VanDeWalle: “Effects of Strain on the Band Structure of Group-III Nitrides,” Phys. Rev. B, 2014, 90 (125118), p. 1–11. 8. J. Berney: “Cathodoluminescence for High-VolumeManufacturing,” Compd. Semicond., 2018, 24 (5). 9. H.-L. Chen et al.: “Determination of n‑Type Doping Level in Single GaAs Nanowires by Cathodoluminescence,” Nano Lett., 2017. 10. A. Jaffré et al.: “Contactless Investigation of the p-Type Doping Concentration Level of SingleMicrometric Size GaAs Crystals Grown on Silicon for Multijunction Solar Cells,” EUPVSEC, 2018. Fig. 6 Example of an optoelectronic device aging study. [21] In this example, a green laser diode is investigatedusing cathodoluminescence spectroscopy before and after aging, by looking at the emitting edge. Damage is clearly visible close to the electrode.