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edfas.org ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 22 NO. 4 16 8. A. Toriumi and T. Nishimura: “Germanium CMOS Potential from Material and Process Perspectives: Be More Positive About Germanium,” Jpn. J. Appl. Phys., 2010, 57 (1 ) , p. 1. 9. K. Morii, T. Iwasaki, R.Nakane, M. Takenaka, and S. Takagi: “High Performance GeO 2 /Ge nMOSFETs with Source/Drain Junctions Formed by Gas Phase Doping,” IEEE Electron Device Lett., 2010, 31 (10), p.1092. 10. J. Kim, S.W. Bedell, S.L. Maurer, R. Loesing, and D.K. Sadana: “Activation of Implanted N-type Dopants in Ge over the Active Concentration of 1× 10 20 cm −3 using Co-implantation of Sb and P, ” Electrochem. and Solid-State Lett., 2010, 13 (1), p. H12. 11. P. Ramesh, K.C. Saraswat, A. Joshi, B.M. Basol, L. Wang, and T. Buyuklimanli: “Near-Surface Sub-nm Resolution Activation Profiles in P and Sb+P Doped Ge,” International Conference on Frontiers of Characterization and Metrology for Nanoelectronics (FCMN), 2019, p.193. 12. P. Ramesh, K.C. Saraswat, A. Joshi, B.M. Basol, L. Wang, and T. Buyuklimanli: “Differential Hall Effect Metrology (DHEM) Sub-Nm Profiling and Its Application to Dopant Activation in n-Type Ge,” Electrochemical Society Transactions, 2020, 97, p.75. 13. J. Borland, S. Qin, P. Oesterlin, K. Huet, W. Johnson, L. Klein, G. Goodman, A. Wan, S. Novak, T. Murray, R. Matyi, A. Joshi, and S. Prussin: “HighMobilityGe-Channel Formationby Localized/Selective Liquid Phase Epitaxy (LPE) using Ge+B Plasma Ion Implantation and Laser Melt Annealing,” 13th International Workshop on Junction Technology (IWJT), Kyoto, 2013, p. 49-53. REFERENCES 1. P. Eyben, M. Xu, N. Duhayon, T. Clarysse, S. Callewaert, and W. Vandervorst: “Scanning Spreading Resistance Microscopy and Spectroscopy for Routine andQuantitative Two-Dimensional Carrier Profiling,” J. Vac. Sci. Technol., B, 2002, 20 , p. 471-478. 2. E. Peiner, A. Schlachetzki, and D. Kruger: “Doping Profile Analysis in Si by Electrochemical Capacitance-Voltage Measurements,” J. Electrochem. Soc., 1995, 142 (2), p. 576-580. 3. W.R. Thurber, R.L. Mattis, Y.M. Liu, and J.J. Filliben: “ The Relationship Between Resistivity and Dopant Density for Phosphorus and Boron Doped Silicon ,” National Bureau of Standards Special Publication 400-64, 1981, NBS Special Publication 400-64, U.S. Department of Commerce, Maryland. 4. D.B. Cuttriss: “Relation Between Surface Concentration and Average Conductivity inDiffused Layers inGermanium,” Bell SystemTechnical Journal, 1961, 40 (2), p. 509-521. 5. A. Joshi and B. Basol: “ALPro System- An Electrical Profiling Tool for Ultra-Thin Film Characterization,” International Conference on Frontiers of CharacterizationandMetrology for Nanoelectronics, 2017, American Vacuum Society Proceedings , p. 170-172. 6. A. Joshi, S.W. Novak, and B.M. Basol: “Differential Hall Effect Metrology (DHEM) for Depth Profiling of Electrical Properties at High Resolution,” International Conference on Frontiers of Characterization and Metrology for Nanoelectronics, 2019, American Vacuum Society Proceedings, p. 187-189. 7. R. Galloni, G. Gavina, R. Lotti, andA. Piombini: “AnAutomatedSystem for theControlledStrippingof ThinSilicon Layers,” RevuedePhysique Appliquee, 1978, 13 , p. 81-84. DHEM: OHMIC CONTACT AND HIGH-MOBILITY CHANNEL ENGINEERING (continued from page 14) ABOUT THE AUTHORS Abhijeet ‘AJ’ Joshi is the CTO/co-founder of ALP. He developedmany aspects of the ALPro system/ technology. Joshi’s expertise includes system integration, semiconductor processing, device physics, robotics, and laser devices. He hasmore than 30 publications, mostly on semiconductor characteriza- tion approaches. Joshi’s previous start-up, TheiaScientific Corp., developedmicro-electromechanical systems (MEMS) based equipment for materials characterization and high-energy light-sources. He is inventor/co-inventor for six patent applications. He received all of his degrees—B.S., M.S., and Ph.D.—in electrical engineering at UCLA. Bulent Basol is the CEO/co-founder of ALP. He is a technologist and entrepre- neur whoparticipated in several hi-tech start-ups as founder/VP/CTO formore than 30 years in the area of semiconductors. His expertise includes development of thin film devices, specifically solar cells, electronic materials, semiconductor processes, and equipment. He received his Ph.D. from UCLA’s electrical engineering department. Basol has 168 U.S. patents and more than 120 publications on semiconductor devices, thin film processes, and semiconductor processing tools. Visit the Electronic Device Failure Analysis Society website edfas.org