November_EDFA_Digital
edfas.org 1 ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 22 NO. 4 DEPARTMENTS DHEM: Ohmic Contact and High- Mobility Channel Engineering and Characterization for ICS Abhijeet Joshi and Bulent M. Basol Differential Hall effect metrology is a technique that can measure both mobility and carrier concentration profiles at nm-level depth resolution. Author Guidelines Author guidelines and a sample article are available at edfas. org. Potential authors should consult the guidelines for useful information prior to manuscript preparation. 4 10 A RESOURCE FOR TECHNICAL INFORMATION AND INDUSTRY DEVELOPMENTS NOVEMBER 2020 | VOLUME 22 | ISSUE 4 edfas.org ELECTRONIC DEVICE FAILURE ANALYSIS 2 GUEST EDITORIAL Brendan Foran 17 INTERNET RESOURCES 34 ISTFA EXHIBITORS LIST 36 EDFAS AWARDS 36 ASM AWARDS 38 DIRECTORY OF FA PROVIDERS R ose Ring 42 TRAINING CALENDAR Rose Ring 44 LITERATURE REVIEW Mike Bruce 45 PRODUCT NEWS Ted Kolasa 50 GUEST COLUMNIST Paul Teich 52 ADVERTISERS INDEX SAM Theory and Case Studies in Reliability and Counterfeit Detection Eric Whitney The scanning acoustic microscope is underutilized in failure analysis labs today. The objective of this article is to provide an overview of SAM fundamentals and present case studies to illustrate SAM capabilities. 20 For the digital edition, log in to edfas.org , click on the “News/Magazines” tab, and select “EDFA Magazine.” STEM EBIC: Toward Predictive Failure Analysis at High Resolution William A. Hubbard This article discusses recent progress toward directly imaging electronic structure using STEM EBIC imaging. 10 4 20 28 Advances in Cathodoluminescence: Recent Steps Toward Semiconductor Fabs and FA Labs Christian Monachon and Matthew J. Davies The main reasons for the emergence of cathodolumines- cence spectroscopy as a useful technique in semiconduc- tor fabs are discussed through a review of several key use cases, mostly impacting compound semiconductor technologies. 28 About the Cover See page 52 for a description of the contest winners' collage on the cover.
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