August_EDFA_Digital

edfas.org ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 22 NO. 3 50 LITERATURE REVIEW T his column covers peer-reviewed articles published since 2017 on security, reverse engineering, and high power and discrete devices. All these are dependent on failure analysis technology for their success. Note that inclusion in this list does not vouch for the article’s quality and category sorting is by no means strict. If you wish to share an interesting, recently published peer-reviewed article with the community, please forward the citation to the above email address and I will try to include it in future installments. Entries are listed in alphabetical order by first author, then title, journal, year, volume, and first page. Note that in some cases bracketed text is inserted into the title to provide clarity about the article topic. Peer-Reviewed Literature of Interest to Failure Analysis: High Power and Discrete Devices, Security, and Reverse Engineering Michael R. Bruce, Consultant mike.bruce@earthlink.net • E. Amini, A. Beyreuther, C. Boit, et al.: “Assessment of a Chip Backside Protection,” J. Hardw. Syst. Secu., 2018, 2, p 345–352. • E. Amini, A. Beyreuther, C. Boit, et al.: “IC Security and Quality Improvement by Protection of Chip Backside Against Hardware Attacks,” Microelectron. Reliab., 2018, 88–90, p 22-25. • N. Asadizanjani, M. Tehranipoor, and D. Forte: “PCB Reverse Engineering Using Nondestructive X-ray Tomography and Advanced Image Processing,” IEEE Trans. Compon. Packag. Manuf. Technol., 2017, 7, p 292. • K.R. Bagnall, E.A. Moore, S.C. Badescu, et al.: “Simultaneous Measurement of Temperature, Stress, and Electric Field in GaN HEMTs with Micro- Raman Spectroscopy,” Rev. Sci. Instrum., 2017, 88, p 113111. • S. Besendörfer, E. Meissner, A. Tajalli, et al.: “Vertical Breakdown of GaN on Si Due to V-Pits,” J. App. Phys., 2020, 127, p 015701. • F.S. Choi, J.T. Griffiths, C. Ren, et al.: “Vertical Leakage Mechanism in GaN on Si High Electron Mobility Transistor Buffer Layers,” J. App. Phys., 2018, 124, p 055702. • H. Das, S. Sunkari and H. Naas: “Non-destructive Detection of Screw Dislocations and the Corresponding Defects Nucleated from Them During SiC Epitaxial Growth and Their Effect on Device Characteristics,” J. Electron. Mater., 2018, 47, p 5099. • M. Da Silva, M. Flottes, G. Di Natale, et al.: “Preventing Scan Attacks on Secure Circuits Through Scan Chain Encryption,” IEEE Trans. Comput.-Aided Design Integr. Circuits Syst., 2019, 38, p 538. • S. Hayashi, T. Naijo, T. Yamashita, et al.: “Origin Analysis of Expanded Stacking Faults by Applying Forward Current to 4H-SiC p–i–n Diodes,” Appl. Phys. Express, 2017, 10, p 081201. • S. Hayashi, T. Yamashita, J. Senzaki, et al.: “Relationship Between Depth of Basal-Plane Dislocations and Expanded Stacking Faults by Application of Forward Current to 4H–SiC p-i-n Diodes,” Appl. Phys. Express, 2019, 12, p 051007. • H. Iguchi, T. Narita, K. Kataoka, et al.: “Impact of Defects on the Electrical Properties of p–n Diodes Formed by Implanting Mg and H Ions Into N-polar GaN,” J. App. Phys., 2019, 126, p 125102. • B.C. Johnson, J. Woerle, D. Haasmann, et al.: “[Using a Nondestructive Confocal Microscopy Technique to Study] Optically Active Defects at the SiC/SiO 2 Interface,” Phys. Rev. Appl., 2020, 12, p 044024. • M. Kanechika, S. Yamaguchi, M. Imanishi, et al.: “Evaluation of Dislocations Under the Electrodes of GaN pn Diodes by X-ray Topography,” Jpn. J. Appl. Phys., 2019, 58, p SCCD22. • N. Kokubo, Y. Tsunooka, F. Fujie, et al.: “Nondestructive Visualization of Threading Dislocations in GaN by Micro Raman Mapping,” Jpn. J. Appl. Phys., 2019, 58, p SCCB06. • P. Kupsc, P. Kupsc, A. Javanainen, et al.: “Microbeam SEE Analysis of MIM Capacitors for GaN Amplifiers,” IEEE Trans. Nucl. Sci., 2018, 65, p 732.