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edfas.org ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 22 NO. 2 46 LITERATURE REVIEW T his column covers peer-reviewed articles published since 2017 on optical microscopy, optical fault isolation techniques, and photon detectors. Optical methods and techniques are fundamental to nondestructive analysis of modern integrated circuits. Note that inclusion in this list does not vouch for the article’s quality and category sorting is by no means strict. If you wish to share an interesting, recently published peer-reviewed article with the community, please forward the citation to the above email address and I will try to include it in future installments. Entries are listed in alphabetical order by first author, then title, journal, year, volume, and first page. Note that in some cases bracketed text is inserted into the title to provide clarity about the article topic. Peer-Reviewed Literature of Interest to Failure Analysis: Optics, Optical Techniques and Fault Isolation Michael R. Bruce, Consultant mike.bruce@earthlink.net • R. Basnet, C. Sun, H. Wu, et al.: “Ring Defects in n-type Czochralski-Grown Silicon: A High Spatial Resolution Study using Fourier-Transform Infrared Spectroscopy, Micro-Photoluminescence, and Micro-Raman,” J. Appl. Phys., 2018, 124, p 243101. • A. Beyreuther, N. Herfurth, C. Boit, et al.: “Contactless Device Characterization of Transistor Structures in Silicon using Electro Optical Frequency Mapping (EOFM),” Microelectron. Reliab., 2020, 106, p 113583. • A. Beyreuther, I. Vogt, C Boit, et al.: “Contactless Parametric Characterization of Bandgap Engineering in p-type FinFETs using Spectral Photon Emission,” Microelectron. Reliab., 2019, 92, p 143. • C. Casavola and G. Pappalettera: “Double Wavelength Combined Electronic Speckle Pattern Interferometry–Moiré System for Full-field Strain Analysis on Electronic Components,” J. Strain Anal. Eng., 2018, 53, p 379. • Q. Cheng, S. Rumley, M. Bahadori, et al.: “[Review:] Photonic Switching in High Performance Datacenters,” Opt. Express, 2018, 26, p 16022. • L.I. Fedina, A.K. Gutakovskii, and T.S. Shamirzaev: “On the Structure and Photoluminescence of Dislocations in Silicon,” J. App. Phys., 2018, 124, p 053106. • W. Feng, N. Watanabe, H. Shimamoto, et al.: “Residual Stress Investigation of Via-Last Through-Silicon Via by Polarized Raman Spectroscopy Measurement and Finite Element Simulation,” Jpn. J. Appl. Phys., 2018, 57, p 07MF02. • Y. Gao, H. Lee, J. Jiao, et al.: “Surface Third and Fifth Harmonic Generation at Crystalline Si for Non-Invasive Inspection of Si Wafer’s Inter-Layer Defects,” Opt. Express, 2018, 26, p 32812. • Y. Gao, H. Shen, J. Cao, et al.: “Defect-Related Electroluminescence in the 1.2–1.7 μm Range from Boron-Implanted Silicon at Room Temperature,” J. Electron. Mater., 2018, 47, p 4970. • Y-M Gao, J-P Xie, and X-Y Yu: “Rayleigh-Sommerfeld Diffraction on a Subwavelength Scale: Theories and a Resolution Criterion [Beyond the Classical Rayleigh and Sparrow Criteria],” Phys. Rev. A, 2019, 99, p 023814. • N. Herfurth, C. Wu, C. Boit, et al.: “Non-Invasive Soft Breakdown Localisation in Low k Dielectrics using Photon Emission Microscopy and Thermal Laser Stimulation,” Microelectron. Reliab., 2019, 92, p 73. • K.A.S. Immink: “How We Made the Compact Disc,” Nat Electron 1, 2018, 260. • K.J.P. Jacobs, T.Wang, I. De Wolf, et al.: “Lock-in Thermal Laser Stimulation for Non-Destructive Failure Localization in 3D Devices,” Microelectron. Reliab., 2017, 76–77, p 188. • V.P. Kalinushkin, O.V. Uvarov, and A.A. Gladilin: “Photoluminescent Tomography of Semiconductors by Two-Photon Confocal Microscopy Technique,” J. Electron. Mater., 2018, 47, p 5087.