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edfas.org ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 21 NO. 2 2 PURPOSE: To provide a technical condensation of information of interest to electronic device failure analysis technicians, engineers, and managers. Felix Beaudoin Editor/GlobalFoundries; felix.beaudoin@ globalfoundries.com Scott D. Henry Publisher Mary Anne Fleming Manager, Technical Journals Kelly Sukol Production Supervisor Joanne Miller Managing Editor ASSOCIATE EDITORS Nicholas Antoniou Nova Measuring Instruments Navid Asadi University of Florida Guillaume Bascoul CNES France Michael R. Bruce Consultant David L. Burgess Accelerated Analysis Jiann Min Chin Advanced Micro Devices Singapore Edward I. Cole, Jr. Sandia National Labs Szu Huat Goh GlobalFoundries Singapore Martin Keim Mentor, A Siemens Business Ted Kolasa Northrop Grumman Innovation Systems Rose M. Ring Lam Research Sam Subramanian NXP Semiconductors Paiboon Tangyunyong Sandia National Labs David P. Vallett PeakSource Analytical LLC Martin Versen University of Applied Sciences Rosenheim, Germany FOUNDING EDITORS Edward I. Cole, Jr. Sandia National Labs Lawrence C. Wagner LWSN Consulting Inc. GRAPHIC DESIGN Jan Nejedlik, designbyj.com PRESS RELEASE SUBMISSIONS magazines@asminternational.org Electronic Device Failure Analysis™ (ISSN 1537-0755) is pub- lished quarterly by ASM International ® , 9639 Kinsman Road, Materials Park, OH 44073; tel: 800.336.5152; website: edfas. org.Copyright©2019byASMInternational.Receive Electronic Device Failure Analysis as part of your EDFAS membership. Non-member subscription rate is $150 U.S. per year. Authorizationtophotocopy itemsfor internalorpersonaluse, orthe internalorpersonaluseofspecificclients, isgrantedby ASM Internationalfor librariesandotherusersregisteredwith theCopyrightClearanceCenter(CCC)TransactionalReporting Service, provided that the base fee of $19 per article is paid directlytoCCC,222RosewoodDrive,Danvers,MA01923,USA. Electronic Device Failure Analysis is indexed or abstracted by Compendex, EBSCO, Gale, and ProQuest. A round the turn of the century, integrated circuit (IC) manufacturing experienced amaterials revo- lution. For decades, the number of periodic table elements used in the fabrication of mainstream chips remained constant at about 10 individual species (see image, elements colored in blue). Since the late 1990s, a steadily increas- ingnumber of elements havebeenused tomake ICs. The first big change came with the introduction of copper as the material for interconnects. Copper brought with it newchallenges that required additional elements andprocess steps to integrate it (e.g., dual damascene process, liner, and encapsulation material). At about the same time, low-k dielectrics were introduced, bring- ing carbon into the manufacturing process. And now cobalt is in the mix for metals (see image, elements colored in yellow). In the late 1990s, it became clear that transistor performance would not continue to follow Moore’s law with dimensional scaling alone. Silicon and its different forms of oxides and nitrides were no longer able to stay on the performance growth curve. The need for ever increasingperformance sparked another revolution in IC manufacturing, this time in materials engineering. Hafnium was introduced in the gate stack, the industry went back to using a metal for the transistor gate electrode (switched from polysilicon), and germaniumwas introduced to create stress in the channel. The shape of the transistor itself experiencedametamorphosis fromplanar to vertical (FinFET). MAY 2019 | VOLUME 21 | ISSUE 2 A RESOURCE FOR TECHNICAL INFORMATION AND INDUSTRY DEVELOPMENTS ELECTRONIC DEVICE FAILURE ANALYSIS GUEST EDITORIAL THE EVOLUTION OF METROLOGY: FROM LAB TO FAB Nicholas Antoniou, Nova Measuring Instruments nicholas-a@novami.com edfas.org (continued on page 8) The United Nations General Assembly proclaimed 2019 the International Year of the Periodic Table of Chemical Elements (IYPT 2019) commemorating the 150th anniversary of the establishment of the periodic table by Dmitri Mendeleev.