February_EDFA_Digital

edfas.org ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 21 NO. 1 54 LITERATURE REVIEW T his column covers peer-reviewed articles published since 2017 on optoelectronic devices, solar cells, photovoltaics, light emitting diodes (LEDs), wide bandgap semiconductors, and III-V materials. As much research is available on these topics, this listing is Part I. More entries will be provided as Part II in the May issue of EDFA. Note that inclusion in this list does not vouch for the article’s quality and category sorting is by no means strict. If you wish to share an interesting, recently published peer-reviewed article with the community, please forward the citation to the above email address and I will try to include it in future installments. Entries are listed in alphabetical order by first author, then title, journal, year, volume, and first page. Note that in some cases bracketed text is inserted into the title to provide clarity about the article topic. Peer-Reviewed Literature of Interest to Failure Analysis: Optoelectronic Devices, Solar Photovoltaics, LEDs, Wide Bandgap Semiconductors, III-V Materials: Part I Michael R. Bruce, Consultant mike.bruce@earthlink.net • N. Ahmed, L. Zhang, G. Sriramagiri, et al.: “Electro- luminescence Analysis for Spatial Characterization of Parasitic Optical Losses in SiliconHeterojunction Solar Cells,” J. App. Phys., 2018, 123, p. 143103. • K. Alberi and M.A. Scarpulla: “Effects of Excess Carriers on Charged Defect Concentrations in Wide Bandgap Semiconductors,” J. App. Phys., 2018, 123, p. 185702. • P.P. Altermatt, Z. Xiong, Q.X. He, et al.: “High- PerformanceP-TypeMulticrystallineSilicon (mc-Si): Its Characterization and Projected Performance in PERC Solar Cells,” Sol. Energy, 2018, 175, p. 68. • I. Berardone, J.L. Garcia, and M. Pagg: “Analysis of Electroluminescence and Infrared Thermal Images of Monocrystalline Silicon Photovoltaic Modules After 20 Years of Outdoor use in a Solar Vehicle,” Sol. Energy, 2018, 173, p. 478. • R. Bhoopathy, O. Kunz, M. Juhl, et al.: “Outdoor Photo- luminescence Imaging of Photovoltaic Modules with Sunlight Excitation,” Prog. Photovoltaics, 2018, 26, p. 69. • O. Breitenstein, F. Frühauf, and J. Bauer: “[Review Article] Advanced Local [Inhomogeneous] Charac- terization of Silicon Solar Cells,” Phys. Status Solidi A, 2017, 214, p. 1700611. • L.J. Brillson, G.M. Foster, J. Cox, et al.: “Defect Char- acterization, Imaging, andControl inWide-Bandgap Semiconductors and Devices,” J. Electron. Mater., 2018, 47, p. 4980. • S.A. Church, S. Hammersley, and P.W. Mitchell: “Effect of Stacking Faults on the Photoluminescence Spectrum of Zincblende GaN,” J. App. Phys., 2018, 123, p. 185705. • V. Guiheneuf, F. Delaleux, S. Pouliquen, et al.: “Effects of the Irradiance Intensity during UV Accelerated Aging Test on Unencapsulated Silicon Solar Cells,” Sol. Energy, 2017, 157, p. 477. • M.A. Islam, M. Hasanuzzamana, and N.A. Rahim, “Investigationof thePotential InducedDegradation of On-Site Aged Polycrystalline PV Modules Operating in Malaysia,” Measurement, 2018, 119, p. 283. • V.M. Kaganer, K.K. Sabelfeld, and O. Brandt: “Piezo- electric Field, Exciton Lifetime, and Cath- odoluminescence Intensity at Threading Dislo- cations in GaN{0001},” Appl. Phys. Lett., 2018, 112, p. 122101. • N. Kokubo, Y. Tsunooka, F. Fujie, et al.: “Detection of Edge Component of Threading Dislocations in GaN by Raman Spectroscopy,” Appl. Phys. Express, 2018, 11, p. 061002. • Y. Komatsu, S. Yamaguchi, A.Masuda, et al.: “Multistage Performance Deterioration in N-Type Crystalline SiliconPhotovoltaicModules UndergoingPotential- Induced Degradation,” Microelectron. Reliab., 2018, 84, p. 127. • S. Kurai, N. Imura, L. Jin, et al.: “Cathodoluminescence Study on Local High-Energy Emissions at Dark Spots inAlGaN/AlGaNMultipleQuantumWells,” Jpn. J. App. Phys., 2018, 57, p. 060311. • I-H. Lee, A.Y. Polyakov, N.B. Smirnov, et al.: “Point Defects Controlling Non-Radiative Recombination