November_EDFA_Digital

edfas.org ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 19 NO. 4 60 LITERATURE REVIEW T he current column covers peer-reviewed articles published since 2015 on beam-based analysis techniques; this includes atomic, electron, neutron, ion, and x-ray beamtechnologies. These technologies typically offer the highest resolution, sometimes down to the atomic level; in addition, focused ion beams (FIBs) are fundamental to inspect- ing and modifying electronic circuits. Note that inclusion in the list does not vouch for the article’s quality, and category sorting is by no means strict. If you wish to share an interesting recently published peer-reviewed article with the community, please forward the citation to the e-mail address listed above and I will try to include it in future installments. Entries are listed in alphabetical order by first author, then title (in bold), journal, year, volume, and first page. Note that in some cases bracketed text is inserted into the title to provide clarity about the article subject. Peer-Reviewed Literature of Interest to Failure Analysis: Beam-Based Analysis Techniques Michael R. Bruce, Consultant mike.bruce@earthlink.net • D. Basta, M. Endrizzi, F.A. Vittoria, et al.: “Compact and Cost Effective Lab-Based Edge-Illumination X-Ray Phase Contrast Imaging with a Structured Focal Spot,” Appl. Phys. Lett., 2016, 108 , p. 224102. • L. Bischoff, P. Mazarov, L. Bruchhaus, et al.: “Liquid Metal Alloy Ion Sources—An Alternative for Focused Ion Beam Technology,” Appl. Phys. Rev., 2016, 3 , p. 021101. • A. Denisyuk, T. Hrnčíř, J.V. Oboňa, et al.: “Mitigating Curtaining Artifacts during Ga FIB TEM Lamella Preparation of a 14 nm FinFET Device,” Microsc. Microanal., 2017, 23 , p. 484. • P.C. Diemoz, C.K. Hagen, M. Endrizzi, et al.: “Single- Shot X-Ray Phase-Contrast Computed Tomography with Nonmicrofocal Laboratory Sources,” Phys. Rev. Appl., 2017, 7 , p. 044029; see also K. Wright: “Focus: 3D Images 10 Times Faster,” Physics, 2017, 10 , p. 48. • Y. Dreznera, Y. Greenzweig, S. Tan, et al.: “High Resolution TEM Analysis of Focused Ion Beam [FIB] Amorphized Regions in Single Crystal Silicon—A Complementary Materials Analysis of the Teardrop Method,” J. Vac. Sci. Technol. B, Nanotechnol. Micro- electron: Mater., Process., Meas., Phenom., 2017, 35 , p. 011801. • R. Estivill, M. Juhel, G. Servanton, et al.: “BoronAtomic- Scale Mapping in Advanced Microelectronics by Atom Probe Tomography [APT],” Appl. Phys. Lett., 2017, 110 , p. 252105. • M. Garbrecht, B. Saha, J.L. Schroeder, et al.: “Dislo- cation-Pipe Diffusion in [Hafnium] Nitride Super- lattices Observed in Direct Atomic Resolution [Using TEM],” Sci. Rep., 2017, 7 , p. 46092; see also MicroscopyandMicroanalysis Editorial “STEMCaptures Elusive Atomic Motion,” microscopy-analysis.com/ editorials/editorial-listings/stem-captures-elusive- atomic-motion, May 22, 2017. • L.A. Gomes Perini, P. Bleuet, J. Filevich, et al.: “Developments on a SEM-Based X-Ray Tomography System: Stabilization Scheme and Performance Evaluation,” Rev. Sci. Instrum., 2017, 88 , p. 063706. • H. Han, A. Beyer, J. Belz, et al.: “Quantitative Atomic Resolution at Interfaces: Subtraction of the Back- ground in STEM Images with the Example of (Ga,In) P/GaAs Structures,” J. Appl. Phys., 2017, 121 , p. 025301. • P.M. Haney, H.P. Yoon, B. Gaury, et al.: “Depletion Region Surface Effects [Induced by FIB] in Electron Beam Induced Current [EBIC] Measurements,” J. Appl. Phys., 2016, 120 , p. 095702. • M. Holler, M. Guizar-Sicairos, E.H.R. Tsai, et al.: “High- Resolution Non-Destructive Three-Dimensional [X-Ray] Imaging of IntegratedCircuits,” Nature, 2017, 543 , p. 402; see also P. Piwnicki: “3-D X-Ray Imaging Makes the Finest Details of aComputer ChipVisible,” phys.org/news/2017-03-d-x-ray-imaging-finest-chip. html, March 16, 2017. • J. Huang, M. Loeffler, U. Muehle, et al.: “A Study of Gallium FIB Induced Silicon Amorphization Using TEM, APT and BCA Simulation,” Microsc. Microanal., 2015, 21 , p. 1839.