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edfas.org ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 19 NO. 4 52 PRODUCT NEWS Larry Wagner, LWSN Consulting Inc. lwagner10@verizon.net PRESS RELEASE SUBMISSIONS: MAGAZINES@ASMINTERNATIONAL.ORG THERMO FISHER SCIENTIFIC ADDS NEW FA PRODUCTS For semiconductor manufacturers seeking fast, high- quality electrical and physical failure analysis, Thermo Fisher Scientific (Hillsboro, OR) announced three new additions to its broad portfolio of semiconductor failure analysis workflows. The company demonstrated these products and its other market-leading technologies during the 24th International Symposiumon the Physical and Failure Analysis of Integrated Circuits (IPFA 2017) in Chengdu, China. The new Helios G4 plasma focused ion beam (FIB) system is designed to deprocess and provide ultra-high- resolution scanning electron microscopy (SEM) analysis on a wide variety of semiconductor devices. The new flexProber system is used for fast electrical fault isola- tion to identify and locate faults at both interconnect and transistor levels of the semiconductor wafer. The new Themis S transmission electron microscope (TEM) is designed to provide atomic-level resolution imaging and high-throughput chemical analysis on themost challeng- ing semiconductor devices. “The semiconductor market continues to evolve at a fast pace, with strong growth in the memory, foundry, Internet of Things (IoT), advanced packaging, and dis- playmarkets,”saidRobKrueger, VicePresidentandGeneral Manager of Semicon- duc tors at Thermo Fisher. “This growth has increased the need for fast, high-quality electrical and physical failure analysis. These products addnewcapa- bilities and increased flexibility to our exist- ing portfolio of failure analysis solutions.” T h e H e l i o s G 4 plasma FIB system is Thermo Fisher’s latest- generation DualBeam microscope. It can performawide variety of failure analy- sis applications, fromhigh-speeddelayering to SEMcross- sectional imaging of devices andTEMsample preparation. Semiconductor delayering is an increasingly important application in fault localization at sub-14 nm technology nodes. The plasma FIB and proprietary Dx chemistry is used to expose metallization layers, allowing electrical fault isolation and analysis to be performed with Thermo Fisher nanoprobing tools. The Helios G4 plasma FIB system can support depro- cessing down to the 7 nmnode and offers automated end pointing that stops milling automatically when themetal or via layer of interest is exposed. It provides up to 10 to 20 times faster milling rates than conventional (Ga + ) FIB solutions, allowing engineers to create larger samples for nanoprobing and TEM imaging, as well as large-area SEM cross sections, on a broad range of advanced (2.5-D) packaging, light-emitting diodes, display, andmicroelec- tromechanical systems. The new flex- Prober system is designed to help engineers quickly locate and iden- t i f y e l e c t r i ca l faults, using an SEM to position fine mechanical probesonexposed circuit elements. Accurately locat- ing the fault can improveproductivityandcost-effectiveness insubsequent analysis by ensuring that the fault is included when a thin section is extracted for high-resolution imaging in a TEM. The flexProber system includes a new SEM column specifically designed for probing applications, with a 2 × improvement in resolution compared to its predecessor, the nProber II. It incorporates many of the capabilities of Thermo Fisher’s high-end Nanoprober product line and is designed to address a broad range of semiconduc- tor device types and process technologies. It provides an ideal pathway into electrical probing, offering an The Helios G4 plasma FIB system The flexProber includes eight probe positioners and a high-resolution sample stage.