edfas.org 9 ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 28 NO. 4 FAILURE ANALYSIS AS A PILLAR OF ADVANCED PACKAGING INNOVATION As illustrated in Fig. 8, modern failure analysis spans an exceptionally wide range of length scales and semiconductor value chain coverages and forms a comprehensive, multi-modal toolkit that supports every stage of semiconductor development, from raw materials to advanced packaging. Rather than relying on a single technique, today’s FA approach is inherently layered and integrated, with each method contributing complementary insights to address the growing complexity of 2.5D and 3D device architectures. Across the semiconductor value chain, these FA technologies provide critical benefits. At the package and system level, SAM and x-ray micro/ nano-CT enable rapid, nondestructive detection of buried defects such as delamination, voids, and cracks within mold compounds, underfill, and interposer structures. Bridging physical inspection with functional performance, electrical fault isolation techniques such as ELITE (lock-in thermography) localize electrically active defects, including leakage paths, resistive shorts, and electromigration hotspots, under realistic operating conditions. After areas of interest are identified, site-specific cross-sectioning using DualBeam FIB-SEM enables high-resolution structural and compositional analysis, while TEM provides atomic-level insight Fig. 7 TEM and EDS results of IMC: (a-1) HRTEM image of point A; (a-2) diffraction pattern of point A; (a-3) EDS of point A; (b-1) HRTEM image of point B; (b-2) diffraction pattern of point B; (c) diffraction pattern of point C; (d-1) diffraction pattern of point D; (d-2) HRTEM image of point D; (d-3) EDS of point D; (e) diffraction pattern of point E; (f) EDS mapping results of IMC layer; and (g) EDS line result of IMC.[22] Fig. 8 Multiscale coverage of advanced FA technologies across the semiconductor value chain, from raw materials and wafer-level defect localization to singledie and advanced packaging.[5,6,10,16,22] (b-1) (b-2) (d-1) (d-2) (a-1) (a-2) (d-3) (a-3) (c) (e) (f) (g)
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